BF1101WR,115 datasheet

Маркировка

BF1101WR,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF1101WR,115 Application: VHF/UHF Channel Mode: Enhancement Channel Type: N Configuration: Single Dual Gate Continuous Drain Current: 0.03 A Current - Test: 12mA Current Rating: 30mA Drain Source Voltage (max): 7V Drain-source Breakdown Voltage: 7 V Frequency: 800MHz Frequency (max): 1GHz Gain: - Gate-source Breakdown Voltage: 7 V ID_COMPONENTS: 1949213 Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.6@5V@Gate 2pF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 1.7dB Noise Figure (max): 2.5dB Number Of Elements: 1 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 1.2@5VpF Package / Case: CMPAK-4 Package Type: CMPAK Pin Count: 3 +Tab Power - Output: - Power Dissipation: 200 mW Power Dissipation (max): 200mW Reverse Capacitance (typ): 0.025@5VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 5V Other Names: 934054130115::BF1101WR T/R::BF1101WR T/R
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